Speaker: Benito Alén
Affiliation: MBE: Quantum Nanostructures Group (IMM-CSIC)
Date: Tuesday, 13 December 2016 at 14:00
Location: Seminar Room, Serrano 121 (CFMAC)
Quantum optical experiments performed on single atoms and ions had inspired the rapid development of solid-state Quantum Optical Information S&T. In the study and exploitation of quantum properties of semiconductor nanostructures, much of the state of the art is defined by experiments done with epitaxial III-V quantum dots (QDs). There are many properties of III-V QDs which make them especially appealing compared with other systems. Either stand alone or embedded in optical microcavities, III-V QDs naturally emit single photons and entangled photon pairs in the relevant telecomm spectral ranges [1-4]. Moreover, just as any other semiconductor, they can be electrically driven from a low power battery, both to emit quantum light [5,6] or to manipulate quantum states [7,8].
These and other proofs of concept make of III-V QDs amenable for highly integrated quantum optical information technologies, yet, to bring expectations to reality, rather important technical and fundamental problems must be solved first. In this talk, I will introduce some of the current challenges in the field and describe how our activities at the MBE: Quantum Nanostructures Group (IMM-CSIC) try to address them [9-10].
References:
[1] P. Michler et al, «A Quantum Dot Single-Photon Turnstile Device», Science, 290 2282 (2000)
[2] C. Santori et al, «Indistinguishable photons from a single-photon device», Nature 419, 594 (2002)
[3] M. Birowosuto et al, «Fast Purcell-Enhanced Single Photon Source in 1,550-mm Telecom Band from a Resonant Quantum Dot-Cavity Coupling». Scientific Reports 2, 321 (2012)
[4] J. Kim et al «Two-Photon Interference from a Bright Single-Photon Source at Telecom Wavelengths». Optica 3, 577 (2016)
[5] Z. Yuan et al, «Electrically Driven Single-Photon Source», Science 295, 102, (2002)
[6] C. L. Salter et al, «An entangled-light-emitting diode», Nature 465, 594, (2010)
[7] E. D. Kim et al., «Fast Spin Rotations by Optically Controlled Geometric Phases in a Charge-Tunable InAs Quantum Dot», Phys. Rev. Lett. 104, 167401 (2010)
[8] W. Liu et al., «In situ tunable g factor for a single electron confined inside an InAs quantum dot», Phys. Rev. B 84 121304 (2011)
[9] J. Herranz et al «Role of re-growth interface preparation process for spectral linewidth reduction of single InAs site-controlled quantum dots». Nanotechnology 26 195301 (2015)
[10] J. M. Llorens et al., «Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology», Applied Physics Letters 107, 183101 (2015)