Edge transport over sub-millimeter distance in the 2D Topological Insulator InAs/GaSb

Speaker: Enrique Díaz
Affiliation: Departamento de Física Fundamental, Universidad de Salamanca
Date: Tuesday, 14 March 2017 at 11:00
Location: Seminar Room, Serrano 121 (CFMAC)

The InAs/GaSb double quantum well (DQW), a tunable two dimensional (2D) electron-hole system, was recently proposed as a 2D topological insulator (TI) [1]. While convincing evidence for transport by edge states in micrometer-sized devices has been reported in several experiments [2, 3, 4], the topological origin of these transport properties is still under debate [5]. In the present work we test the transport by edge states in several DQW’s with diferrent sizes InAs/GaSb to cover from normal insulator (NI) and TI samples up to unprecedented length scales and high magnetic fields. First of all, we address the low-temperature electrical transport in a local measurement configuration (Fig.1 (a)), both in zero-field and in the integer quantum Hall regime (Fig.1 (c)), with the latter indicating the realization of a non-trivial system [6]. Successively, making use of non-local transport measurements (Fig.1 (b), (d)), we consistently find evidence for transport by edge states over sub-millimeter distances, as tested using the methodology of Refs.[2, 3] and applying a resistor network model analogous to the one of Ref.[4]. Under high magnetic fields (up to B = 30 T), we detect persistent transport by edge states, with a clear suppression of backscattering in the case of perpendicular orientation. We analyse the response of the edge states to systematic inversions of the current contacts and/or of the polarity of the magnetic field. Many-body interactions can produce exotic novel ground states in these systems. An interacting electron and hole can spontaneously form excitons, i.e. a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states.

References
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